发明名称 SILICON CARBIDE COMPOSITE AND PROCESS FOR PRODUCTION
摘要 Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting said dispersions together to produce an integral bi-layer composite; (d) subjecting said composite to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (e) heating silicon to cause liquefaction and direct infiltration into both layers of said composite; and (f) sintering the composite containing silicon under conditions sufficient to produce a beta -silicon carbide binder uniting said composite. The resultant composites are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.
申请公布号 ZA8104368(B) 申请公布日期 1982.10.27
申请号 ZA19810004368 申请日期 1981.06.26
申请人 GEN ELECTRIC 发明人 OHNO JOHN MICHIO
分类号 B32B9/00;B01J3/06;B24D3/06;C04B35/573;C09K3/14 主分类号 B32B9/00
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