| 摘要 |
PURPOSE:To form both gate electrodes on the same semiconductor substrate, by forming the gate electrode of an MIS element on the surface of the semiconductor substrate, and thereafter forming the gate electrode of an MIS element constituting a nonvolatile memory on the surface of the semiconductor substrate. CONSTITUTION:As an interlayer insulating film 12, e.g., a CVD film is formed. A contact hole 13 is provided in an ordinary Si gate step. An oxide film 15 is formed on the contact hole by thermal oxidation or CVD. An Si substrate is exposed only at a region 16 including the channel region of an MNOS element by photoetching. A very thin oxide film 20 (20-100Angstrom ) is formed at a region which is to become the gate of the MNOS element. A nitride film 21 is formed on the entire surface thereon. The nitride film and the oxide film at the contact part are removed by photoetching. Then Al is evaporated, and patterning is performed. |
