| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI substrate having a large-area single-crystal semiconductor layer, a low-cost, highly-productive manufacturing method of an SOI substrate using a glass substrate as the substrate, and furthermore, a large-scale semiconductor device and a low-price semiconductor device manufactured with such an SOI substrate at a high throughput and with high productivity. <P>SOLUTION: A plurality of single-crystal semiconductor layers are formed at given intervals on a glass substrate serving as a supporting substrate, and thereafter the glass substrate is heat-treated. The glass substrate is shrunk by this heat treatment, and along therewith adjacent ones of the single-crystal semiconductor layers come in contact with each other. Application of an energy beam is carried out with the plurality of single-crystal semiconductor layers in contact with one another to integrate the plurality of single-crystal semiconductor layers, and thus a continuous single-crystal semiconductor layer is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
