Semiconductor device comprising a localised doped region.

摘要

When fabricating semiconductor devices from a larger slice of semiconductor material, it is sometimes necessary to produce a region of dopant impurity in which the region extends right through the slice from one major face (7) to the opposite major face (4). Such a region is produced over localised defined areas of the slice and often they correspond to the boundaries of individual devices along which the slice is subsequently cut to produce a number of physically separate devices. A deep but narrow recess (6) is initially formed in one face of the slice and the appropriate impurity is diffused into the surface of the recess and the opposite unrecessed face until the two diffusions meet.