CAPACITOR WITH HOLMIUM DOPED TITANIUM OXIDE AND METHOD FOR FABRICATING THE SAME

摘要

A capacitor with a holmium doped titanium oxide layer and a method for fabricating the same are provided to have the properties of the leakage current and the breakdown field under the condition that the thickness of equilibrium oxide layer is less than 10Å. A capacitor with a holmium doped titanium oxide layer comprises a bottom electrode(100), a dielectric layer(101) and an upper electrode(102). The bottom electrode is prepared on the substrate. The bottom electrode can be the cylindrical structure. The dielectric layer is formed on the bottom electrode. The dielectric layer can be the holmium doping titanium oxide layer. The holmium doping titanium oxide film can be the holmium oxide layer or the titanium oxide layer. The holmium oxide layer and the titanium oxide film can be formed by using the method for atomic layer deposition as the in-situ. The upper electrode and the bottom electrode are made of the metal material.