发明名称 MOS Integrated circuit structure for discretionary interconnection
摘要 A flexible, symmetrical, MOS integrated circuit structure and layout employing a unit cell approach for customized wiring. Special features include multiple contacts on individual source/drain elements, rectilinear interconnections in the X- and Y- directions, and interconnection underpasses integral with the source and drain regions of the individual devices. The structure is especially applicable to complementary MOS integrated circuits of large complexity.
申请公布号 US4356504(A) 申请公布日期 1982.10.26
申请号 US19800134968 申请日期 1980.03.28
申请人 INTERNATIONAL MICROCIRCUITS, INC. 发明人 TOZUN, ORHAN N.
分类号 H01L23/528;H01L23/535;H01L27/118;(IPC1-7):H01L27/02;H01L29/34 主分类号 H01L23/528
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