发明名称 SUBSTRATE HEATING DEVICE FOR MOLECULAR BEAM EPITAXIAL SYSTEM
摘要 PURPOSE:To increase the efficiency of heating and to make the temperature of a substrate uniform by a method wherein a heating plate, arranged opposing to the substrate in order to heat the substrate, is formed in such a manner that its inner circumferential side is thickly formed and the outer circumferential side is thinly formed. CONSTITUTION:The heating plate 11 arranged opposing to a substrate 1 is made of the material such as pyrolytic boron nitride, for example, and the heating plate 11 is thickly formed on the inner circumferential side and thinly formed on the outer circumferential side. When the heating plate 11 having the above-mentioned plate thickness distribution is used, the quantity of transmitted radiant heat on the outer circumferential part of thin plate thickness becomes larger than that of the inner circumferential part having heavy plate thickness, end the substrate 1 can be heated more on the outer circumference than the inner circumference. As a result, the quantity of heat escaping by the heat transfer through a substrate holder 2 on the outer circumference of the substrate 1 can be compensated, and the temperature distribution of the substrate 1 can be made uniform. Also, as the substrate 1 is heated up by the quantity of transmitted radiant heat of the heating plate 11, the efficiency of heating of the title device can be improved.
申请公布号 JPS63100713(A) 申请公布日期 1988.05.02
申请号 JP19860245464 申请日期 1986.10.17
申请人 HITACHI LTD 发明人 TAKAHASHI NUSHITO;KAJI RYOKICHI
分类号 H01L21/203;H01L21/26 主分类号 H01L21/203
代理机构 代理人
主权项
地址
您可能感兴趣的专利