| 摘要 |
PURPOSE:To obtain an integrated circuit with high speed and low power consumption, by causing reaction with two or more kinds of electrode materials and active layers in the mixed existance of a shot barrier gate type FET with different pinch-off voltages. CONSTITUTION:An N type GaAs layer 2, sources 3, 3' and drains 4, 4' of Au- Ge alloy are formed on a semi-insulating GaAs substrate 1. Next, after forming a gate electrode 5 constituted of Pt and gate electrode 6 of aluminium, Pt and GaAs are solid phase reacted by heat treatment in Ar atmosphere to form a compound gate electrode 5' for the formation of a buried shot barrier gate type FET (SBFET). |
