| 摘要 |
PURPOSE:To form a pattern having a small number of microscopic defects in a short time, by coating a specified radiation resist containing halogen on a substrate, irradiating it with radiation, and processing it with a developing solution containing butanone. CONSTITUTION:A homopolymer of a monomer represented by the formula and/ or a copolymer of this monomer and another vinyl monomer is coated on a substrate, a desired part of it is irradiated with radiation, and said polymer or copolymer is processed with a developing solution containing 2-butanone or 2- methyl-3-butanone. As the usable positive type radiation resist, polytrifluoroethyl alpha-chloroacrylate, a copolymer of trifluoroethyl alpha-chloroacrylate and t-butyl methacrylate, etc. are embodied. As the developing solution, a mixture of 2-butanone and 2-heptanone, a mixture of 2-butanone and 3-methyl-5-hexanone, etc. are exemplified. |
