| 摘要 |
PURPOSE:To obtain the required epitaxial growth layer of the large area without opening a vacuum vessel by a method wherein the material of metal molecular beam is prepared outside the vacuum vessel and a substrate is placed under the molecular beam spurting out nozzles. CONSTITUTION:A substrate is provided. (C2H5)3Ga gas kept at approximately 150 deg.C by being held in a heating oven 4 is supplied to a molecular beam spurting out nozzle 11 provided in a vacuum vessel 3 which is exhausted by a vacuum exhausting equipment 2 via piping 10 equipped by heaters. (C2H5)3Ga gas is thermally decomposed by the nozzle 11 and Ga molecular beam is obtained. On the other hand, AsH3 gas is supplied from a gas source 21 to a molecular beam spurting out nozzle 26 provided in the vacuum vessel 3 via piping 25 equipped by heaters. AsH3 gas is thermally decomposed by the nozzle 26 and As molecular beam is obtained. The Ga and As molecular beams are applied to the substrate 1 by opening a shutter 27 and epitaxial growth is made on the substrate 1. In this case, the temperature of the substrate 1, opening rate of adjustment valves 8 and 23, and so forth, are controlled by a controller 7 in accordance with the output from a mass analyser 28 in the vessel 3. |
