Method for forming a protecting film on side walls of a semiconductor device

摘要

A method for forming a protecting film on the side walls of a semiconductor device having an exposed PN junction at the side walls, e.g. a semiconductor laser, involves placing the device on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.