| 摘要 |
Apparatus for annealing semiconductor wafers includes a support for receiving the wafers and resistive heaters for heating the wafers by thermal conduction through the support or by convection. A high intensity arc lamp scans the heated wafers thereby raising the temperature sufficiently for heat treating. The process is simple, rapid, efficient, and does not create damaging thermal stresses in the wafers. The high temperature and short time treatment enables material properties unobtainable with conventional thermal processes.
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