| 摘要 |
A protection circuit for a semiconductor substrate comprises a semiconductor substrate of a first conductivity type, a first region of a second conductivity type formed in the semiconductor substrate, a second region of the first conductivity type formed in the first region, a means for applying a reverse bias to a PN junction formed between the semiconductor substrate and the first region and a PN junction formed to the first and second regions, and a wiring for electrically connecting the second region to the semiconductor device to be protected.
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