| 摘要 |
PURPOSE:To prevent the occurrence of a shading phenomenon by forming the 1st and 2nd junction areas on the main surface of a substrate semiconductor, a photoelectric converting element group in the 1st junction area, and a peripheral circuit group in the 2nd junction area. CONSTITUTION:On the 1st P-well 14 formed on an N type substrate semiconductor 13, a photoelectric converting element group is formed. Similarly, a peripheral circuit group for drivig said photoelectric converting element group is formed on the 2nd P-well. There is an N type area 17 between the 1st P-well and 2nd P-well 16, and consequently charge generate in the 2nd P-well is never diffused to the 1st P-well 14, and absorbed by the N type substrate 13 or disappears in the 2nd P-well 16 by recombination. |
