| 摘要 |
The glass layer(3) is formed after aluminum layer, metal(2) is made on silicon base(1). Then photo resistor is painted on the glass layer. Then part forming electrode is melted by photo masking method. The glass layer is melted by photo masking with solution of CrO3 added to B-HF and CH3COOH. Its ratio is 3(volume) : 1(volume) : 1g/B-HF 300(volume). This solution combines with aluminum layer(2), metal, so that it forms a protective film (Al2O3) (5).
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