SOLID-STATE IMAGE PICKUP DEVICE

摘要

PURPOSE:To eliminate the occurrence of a blooming phenomenon by making an area constituting a storage part deeper than that constituting a readout part. CONSTITUTION:A semiconductor layer 27 of a P type conduction type having P-N junction with a substrate semiconductor 26 is formed, and this semiconductor layer 27 is provided with an N type storage part 19 as a photoelectric conversion part and a readout part 9 composed of a vertical shift register for reading signal charge. The junction depth of the storage part 19 from the surface of the semiconductor layer 27 is greater than the junction depth of the buried layer of the vertical shift register.