发明名称 OHMIC ELECTRODE FORMATION METHOD
摘要 Base metal layer(11), which is familiar with semiconduct or and soakable to solder is formed on the semiconductor wafer(10). Then the solder layer(12) is formed on the base metal(11) by evaporation. According to this method, adhesion between silicon wafer(10) and this first metal layer are formed in vaccum. The oxide cannot be formed between each layer and the property of adhesion is good. Solder layer has a uniform thickness because it is formed by evaporation. Metal layer for preventing oxidation is made on the solder(12).
申请公布号 KR820002038(B1) 申请公布日期 1982.10.25
申请号 KR19790000637 申请日期 1979.03.02
申请人 NEW JAPAN ELECTRIC CO LTD 发明人 IDO SYUJO
分类号 (IPC1-7):H01L29/48 主分类号 (IPC1-7):H01L29/48
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