| 摘要 |
PURPOSE:To transfer the mask pattern with high precision by a method wherein the photoelectric mask and the specimen are collectively moved in the direction of the electromagnetic field, located and after locating in the status where the photoelectric mask and the photoelectric microscope are in proximity with each other, separated from each other to introduce the reflecting mirror for irradiation. CONSTITUTION:The photoelectric mask 3 and the specimen 5 are supported in one body on the rack 21 which is moved 22 making the mask 3 approach the photoelectric microscope 10 to detect the relative location of the mask 3 and the specimen 5 for locating them. The rack 21 whereon the mask 3 and the specimen 5 are fixed is driven downward 22 to interoduce the reflecting mirror 23 into the resultant gap. The ultraviolet rays from the light source 7 reflecting the mirror 23 and irradiating the overall surface of the mask 3 emit the photoelectron from the photoelectric surface 3c making the resist 4 on the specimen 5 expose itself corresponding to the mask pattern 3b to transfer the pattern. The pattern may be transferred with high precision with little position detecting error, because the rack 21 having no movement of the microscope 10 moves in the vertical direction of the electromagnetic field. |
