| 摘要 |
PURPOSE:To shorten the length of wiring and to reduce its area by eliminating the need to provide a contact hole where an MOS transistor (TR) is formed. CONSTITUTION:Gate input wiring 12 made of a polysilicon layer is an N type diffused area for the source and drain areas of an MOS TR and part of wiring, and an N channel MOS TR is formed only at every position marked with a circle among intersections of gate input wiring 15 and the diffused areas 12. At intersections which are not marked with the circle, on the other hand, diffused areas with high concentration 16 are formed and the MOS TR is not formed there. Then, MOS TRs are connected in series in the extension direction of the diffused areas 12 to form series structure. |
