| 摘要 |
PURPOSE:To shorten the switching time in the junction gate type thyristor, by providing a dielectric layer on the sides of the thyristor substrate at the part adjacent to a main current path, and forming an insulating gate electrode which is electrically connected with a gate electrode. CONSTITUTION:An N<-> type base layer 5 is formed on a P<+> type semiconductor substrate 4 which is to become anode layer, and an N<+> type cathode layer 6 is layered thereon. Mesa etching is performed to the middle of the layer 5 and the main current path is formed. Then SiO2 films 7 are deposited on the sides of the mesa part. P<+> type gate region 8 are diffused and formed in the layer 5 which is exposed to the bottom surfaces 103 of the mesa part. The insulating gate which is electrically connected to the gate electrodes 3 that are provided along the films 7 is provided. Thereafter, a cathode electrode 2 is attached to a surface 102 of the layer 6, and an anode electrode 1 is deposited on a back surface 101 of the substrate 4. In this constitution, the thyristor, whose switching operation, especially TURN ON operation, is fast, can be obtained. |
