| 摘要 |
PURPOSE:To eliminate a fluctuation in interface level density by the variation of a process and to increase productivity by a method wherein a thin insulating film is provided between a strong dielectric and a semiconductor substrate and a thin metal film is formed between the thin insulating film and the strong dielectric to form a memory device. CONSTITUTION:An N type source region and a drain region, 2 and 3 are formed by diffusion on a P type Si substrate 1 and a thick field SiO2 film 4 and a thin gate SiO2 film 5 are formed at the circumference section of the substrate 1 and at the channel region of the substrate 1 exposed between the regions 2 and 3 respectively. Next, a thin Al floating gate layer 6 acting as a conductor by floating and a slightly thick strong dielectric film 7 consisting of balium titanate are stacked and formed on the film 5. Then, an Al gate electrode layer 8 is formed on the film 7. In this way, the floating gate layer 6 exists between the layer 7 and the film 5. Therefore, it is possible to prevent an increases of Si- SiO2 interface level density. |
