| 摘要 |
<p>PURPOSE:To cool a semiconductor device in a superior cooling efficiency by adopting a semiconductor device cooling method wherein a semi-solidified metal consisting of a mixed phase of liquid and solid is used as a junction layer between a cooling structure wherein a coolant is circulated and the semiconductor device. CONSTITUTION:The bonding of a semiconductor device 10 and a metal block 11 is executed with a semi-solidified metal 18 which presents a sher bet state at high viscosity at the operating temperature of a semiconductor. Thereby, the bonded state of both becomes complete and moreover there is no possibility of the short-circuits between circuits due to outflow and leakage that are caused by the reduction in viscosity and a reduction in heat resistance can be realized. As the semi-solidified metal which bonds the metal block 11 and the semiconductor device 10, an InGa solid solution of 80 wt. % is used. The solid solution of this composition is a two-phase mixed material within an extent of 15.7-88 deg.C, its viscosity is high, there is no possibility of outflow and leakage, a complete thermal bonding is executed and the same low thermal resistivity as the case where the block and the device are welded with solder can be obtained.</p> |
