| 摘要 |
PURPOSE:To obtain a laser having single stability for longitudinal and lateral modes and no excess optical noise component against a modulation signal by a method wherein an N type GaAlAs layer, GaAs active layer, P type GaAlAs layer are stacked and epitaxially grown on an N type GaAs substrate having a groove at the central section and cyclic projections and recesses are provided on the surface of the P type layer. CONSTITUTION:A recessed groove 9 with a depth of 1.5mum and a width of 2- 8mum is digged in the direction[011]on an N type GaAs substrate 1 having a (100) plane, and an N type Ga1-xAlxAs (x 0.3) layer 2, GaAs active layer 3, and P type Ga1-yAlyAs (y 0.3) layer 4 are stacked on the whole surface of the substrate 1 for liquidus epitaxial growth while burying the groove. Next, a diffraction grating 8 with a cycle of 3,700Angstrom and a depth of 1,500Angstrom is formed on the surface of the layer 4 by using an interference exposure method used laser light and a chemical etching method at the same time and a P type Ga1-zAlzAs (z 0.1) layer 5 is grown on the whole surface of the layer 4 including the diffraction grating 8. After that, Zn is diffused by corresponding to the groove 9 and a Cr-Au electrode 7 is formed on the layer 5 and an Au-Ge-Ni electrode 6 is installed on the rear of the substrate 1. |
