| 摘要 |
<p>PURPOSE:To form optical conductive layers bringing images which have a great dark resistance and high sensitivity from a visible light area to a near infrared radiation area, by containing H and O in an amount of specific range and the impurity of IIIA group elements in the periodic table to amorphous Si-Ge in a specific molar ratio range. CONSTITUTION:Amorphous silicon-germanium (a-Si-Ge) layer containing about 10-40 atomic % H, about 10<-3>-5X10<-2> atomic % O and 10-20,000ppm impurity of IIIA group elements in the periodic table (B is preferable) is formed into a conductive supporting base by glow discharging resolution method in a molar ratio of about 1:1-19:1 of Si:Ge to obtain optical conductive layers. SiH4, GeH4, gaseous B2H6 etc. are used as raw materials and a little O2 gas is supplied, then the base is formed by glow discharging resolution method. N type semiconductor may be formed by adding PH3 gas. By such way, good photorecepters which have high sensitivity from a visible light area to a near infrared radiation area of 900nm, high dark resistance, high resistance to abrasion and high resistance to heat etc. are obtained.</p> |
