发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain wirings of multiple layers whose mutual connection and flatness are excellent and manufature is easy, by connecting the wirings of the upper layer and the lower layer by using a plurality of column shaped bodies having the same cross sectional area. CONSTITUTION:The lower layer wirings 2 and 2' are formed on an Si substrate 1. A plurality of the column shaped conducting bodies 14 are formed on the wiring 2 having a large area, and one conducting body 14 is formed on the wiring 2' having a small area. Then a liquid insulating material is applied and heated, and an interlayer insulating film 5 is formed. The cross sectional area of the column shaped conducting bodies 14 is small and all the same, and the thickness of the insulating film deposited on the upper surfaces of the conducting bodies is thin and uniform. Therefore, when the surface layer is etched away thinly, the surfaces of the column shaped conducting bodies 14 are exposed. Since the etching amount is small, the surface is flat, partial insufficient etching or excessive etching is not generated, and the control is easy. Thereafter the upper wiring layer 3 is provided and the work is finished.
申请公布号 JPS57172752(A) 申请公布日期 1982.10.23
申请号 JP19810057504 申请日期 1981.04.16
申请人 FUJITSU KK 发明人 KURAHASHI TOSHIO;WATANABE KIYOSHI
分类号 H01L21/3205;(IPC1-7):01L21/88 主分类号 H01L21/3205
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