| 摘要 |
<p>PURPOSE:To obtain an element having superior photoelectric conversion characteristics by a method wherein a CdS film and a CdTe film are made by a sputtering method and a vacuum evaporation method respectively when stacking a transparent conductive film, the CdS film, and the CdTe film on a photo transmission substrate and forming a photoelectric conversion element by providing paired electrodes on the films. CONSTITUTION:A transparent conductive film such as In2O3, SnO2 is formed on a photo transmission substrate consisting of quartz glass or the like by a sputtering method and a CdS film is grown by the sputtering method in Ar gas keeping pressure at 2X10<-1>-3X10<-1> Torr while maintaining substrate temperature at 250-300 deg.C and the growth direction is directed to the C-axis direction in the vertical direction of the substrate. Next, heat treatment is applied to the CdS film under atmosphere containing O2 at 300-600 deg.C for about 10-60min. The temperature of the substrate is again returned to 150-300 deg.C and a CdTe film is formed on the CdS film by a vacuum evaporation method. After that, heat treatment at 300-600 deg.C is applied to these stacked films under inert atmosphere or atmosphere containing a small amount of O2 to obtain a hetero junction having good contact.</p> |
