| 摘要 |
PURPOSE:To control the threshold voltage of a transistor by the density of a P<+> layer, by covering the peripheral part of a diffusion layer with the P<+> layer. CONSTITUTION:Peripheral parts on N<+> diffusion layers 121 and 122 are covered with P<+> layers 13 and 14. By providing this P<+> layer, the signal accumulation capacity is increased, and the threshold voltage of a transistor is controlled by the density of the P<+> layer. Further, P<+> layers 13 and 14 are produced by the self-matching method where a polycrystalline Si 10 for gate electrode and a field oxide film 11 are used as masks, and electric charge generated in a deep part of the substrate is prevented from being charged to a photodiode 121 and a horizontal signal line 8 through a drain region 122 because of P<+> layers 13 and 14. That is, spectral and sensitivity characteristics are controlled by P<+> layers 13 and 14. |
