Epitaxial wafer of a compound semiconductor

摘要

An epitaxial wafer of a compound semiconductor comprising a monocrystalline GaP semiconductor substrate and an active GaAs1-xPx layer having a mixed-crystal ratio x in the range from 0.5 to 1 is used for an LED. A light-absorbing GaAs1-xPx layer having a mixed-crystal ratio x which is less than that of the active layer is formed between the monocrystalline semiconductor substrate and the active layer in order to suppress the reflection of light at the surface of the substrate.