| 摘要 |
PURPOSE:To improve the accuracy of an exposure pattern by producing not tension force but compression stress in the step of accumulating a resist film, thereby eliminating the production of large tension force even by the volumetric contraction force in the step of exposing or postbaking thereafter. CONSTITUTION:When a negative type resist which crosslinks by an exposure is used in the accumulation of a resist film in the first step of a photoetching technique, the resist is accumulated so that the compression stress of the film becomes 5X10<7>-5X10<8> dyn/cm<2>. When a positive type resist which reacts and decomposes by an exposure is used, the resist is accumulated so that the compression stress becomes 1X10<7>-5X10<7> dyn/cm<2>, an energy beam such as ultraviolet light, an X-ray, a charged particle or the like is emitted to form a pattern. In this menner, when a resist film is formed on a semiconductor substrate and is patterned, the entire stresses are balanced, with the result that on warping occurs in the substrate. |
