| 摘要 |
PURPOSE:To optimize the stress distribution of a semiconductor device by opening a hole at a plasma CVD Si3N4 film on an Si substrate, forming a multilayer film wire conductor, forming a solder projection electrode through a metallic film on the prescribed position of the wire, and extending the wire conductor by at least 10mum from the metallic film. CONSTITUTION:A multilayer wire 3 made of Al, Ti, Cr or the like is formed through a plasma CVD Si3N4 film 2 on an Si substrate 1. Then, a plasma CVD Si3N4 4 having excellent mechanical strength is formed as a protective film on the overall surface, a connecting hole 5 is opened thereat, and a Ti 6 and a Cu 7 are sequentially covered in the prescribed thickness. The Ti 6 prevent the mutual diffusion between the wire 3 and the Cu 7. Then, a plasms CVD Si3N4 8 is superimposed, a resist mask 10 is covered, and a hole 9 is opened. Subsequently, plating films are laminated in the sequence of an Ni 11, an Sn 12 and a Pb 13, the resist 10 is removed, the Cu 7 and the Ti 6 are etched with the mask 8, a wire pattern is completed, and a solder projection electrode 14 is formed. In this case, particularly when a Cu-Ti film extends in the length longer than 20mum from the peripheral edge of the Ni film 11, it is extremely effective for the improvement of the stress distribution of the protective film under the solder electrode and for the prevention of the damage of the film. |
