发明名称 SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent a melt back of the shoulder of a groove formed on a substrate by making the angle forming between the side wall surface of the groove and the substrate growing surface to less than the prescribed angle. CONSTITUTION:An angle theta between the side wall surface of a groove 2 formed on a substrate 1 and the substrate 1 growing surface is set to less than 50 deg.. Thus, solute which is supplied for quick growth of a grown layer at both ends A of the bottom of the groove 2 is performed only in the solution, and melt back of the shoulder B of the groove is not produced. In this manner, A grown layer 3 having no melt back of the shoulder B of the groove can be obtained. This layer 3 has no disorder in the resistivity in the vicinity of the groove 2 and no disorder in the crystallinity as preferable crystal. Further, since the width W of the groove is maintained even after the growth, the effect of the groove 2 thus formed can be performed as it is.
申请公布号 JPS57170586(A) 申请公布日期 1982.10.20
申请号 JP19810055975 申请日期 1981.04.13
申请人 SHARP KK 发明人 YAMAMOTO SABUROU;MURATA KAZUHISA;HAYASHI HIROSHI;TAKENAKA TAKUO
分类号 H01L21/306;H01L21/208;H01S5/00 主分类号 H01L21/306
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