发明名称 CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTOR
摘要 A selective chemosensitive microelectronic transducer is provided for the detection and measurement of chemical properties, by engineering a field-effect transistor such that source 6 and drain 7 regions are connected to bonding pads 2 and 4, and the semiconductor bulk connected to pad 1. The metal gate 8 is extended laterally to a remote area 9, and also to bonding pad 3 via a narrow metallization track 5 designed to support only a limited, predetermined electrical current in the manner of a fusible link. External electrical access to the device is achieved with wirebonding 14, and the device is selectively sealed with an inert, impervious encapsulation material 10 such that only gate area 9 remains exposed. Electroactive materials are deposited over the offset-gate area 9, or electrodeposited using connection through 8, 5 and 3. Subsequently, link 5 is open-circuited by pulsed electrical overload, creating a floating chemosensitive gate.
申请公布号 GB2096824(A) 申请公布日期 1982.10.20
申请号 GB19810011198 申请日期 1981.04.09
申请人 SIBBALD ALASTAIR;COVINGTON ARTHUR KENNETH 发明人
分类号 G01N27/414;H01L21/60;H01L23/525;H01L29/423;(IPC1-7):01L29/78 主分类号 G01N27/414
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