PLANAR GATE TURN-OFF FIELDS CONTROLLED THYRISTORS AND METHOD OF MAKING THE SAME

摘要

In a gate turn-off field controlled thyristor device the gate region 12 is formed by producing a plurality of vertical-walled channels by preferential etching of one surface of a semiconductor substrate and selectively refilling the channels with a vapor phase epitaxial growth. A plurality of cathode regions 14 are formed on the same surface and interdigitated with the gate region section and an anode region 15 formed on the opposite surface of the substrate by conventional techniques.