| 摘要 |
PURPOSE:To obtain an ultrafine X-ray absorbing layer pattern by forming the prescribed resist pattern on an Si substrate when forming the X-ray absorbing layer pattern on the substrate, burying the part therebetween with an auxiliary layer made of X-ray absorbing material, emitting an inert ion beam to readhere the auxiliary layer to the side surface of the resist pattern and remaining only the auxiliary pattern. CONSTITUTION:A photoresist film 22 is coated on a substrate 21 made of Si, the film is formed in the prescribed pattern 23 by an ordinary optical exposure technique, and an auxiliary layer 24 of an X-ray absorbing material is formed on the part between the patterns 23 and on the pattern 23 by a film forming method having good directivity such as a vacuum deposition or a sputter deposition. Then, an Ar ion beam is emitted in a shower stage on the overall surface to etch the surface, and with the layer 24 as a readhesive layer 25 the layer 24 is adhered only to the side wall of the pattern 23. Thereafter, the pattern 23 is ashed and removed, and the pattern 25 having a thickness less than 0.5mum and large aspect ratio can be obtained while employing an ordinary optical exposure technique. |
