| 摘要 |
A process for forming a contact through-hole in an insulating layer lying between multilayer conductors comprises the steps of: forming a photoresist layer on the insulating layer with an aperture therein exposing, and defining, the position of a through-hole to be found in the insulating layer; wet-etching the insulating layer in the portion exposed by the aperture to form a preceding hole; heating the photoresist layer to bend the end portion of the photoresist layer into the preceding hole but to a limited extent such that the end portion does not come into contact with sloped side wall of the preceding hole; and dry-etching the insulating layer to complete the etching of the contact through-hole while maintaining the desired, sloped sidewall thereof, thereby preventing cracks from occurring in the upper one of the multilayer conductors in the portions thereof which extend through the through-hole.
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