| 摘要 |
An embodiment of the present invention relates to a light emitting device and a light system including the same. The light emitting device according to the embodiment of the present invention comprises: a reflection layer having a distribute bragg reflector (DBR) structure on a substrate; a first conductive semiconductor layer on a reflection layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The reflection layer is different in reflective index, wherein a plurality of layers having the same pair number can be laminated. The reflection layer includes a first reflection layer, a second reflection layer, a third reflection layer and a fourth reflection layer. The first reflection layer and the third reflection layer have a composition of AlxGa(1-x)As (provided that x=0.9), and the second reflection layer and the fourth reflection layer can have a composition of AlyGa(1-y)As (provided that y=0.5). The present invention is designed to provide the light emitting device, the light emitting device package including the same, and the light system including the same capable of increasing a stop band bandwidth by including the reflection layers having a multiple DBR structure on an absorbing substrate. |
