发明名称 |
Method for mass producing miniature field effect transistors in high density LSI/VLSI chips |
摘要 |
In the disclosed method, dopant atoms of a first conductivity type are implanted into the surface of a semiconductor substrate to form a channel region of each transistor having a relatively high dopant density at a predetermined depth below the surface and a substantially lower dopant density at the surface. This eliminates reachthrough in the channel without adversely increasing the channels threshold voltage. Thereafter, dopant atoms of a second conductivity type are implanted into the substrate to form source and drain regions adjacent to the channels having a depth of less than 0.3 mu m below the surface. This minimizes the radius of curvature and corresponding depletion width at the respective junctions with the channel. Subsequently, a patterned insulating layer is formed on said surface at temperatures that are far below the insulating layer's flow point. This avoids diffusing the distribution of the implanted dopant atoms. Later, a layer of metallic contact is formed in an opening of the patterned insulating layer that exposes one of the source and drain regions. This layered metallic contact has a lower layer which is comprised of a material that prevents an upper layer from penetrating through the exposed source or drain region.
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申请公布号 |
US4354307(A) |
申请公布日期 |
1982.10.19 |
申请号 |
US19790099515 |
申请日期 |
1979.12.03 |
申请人 |
BURROUGHS CORPORATION |
发明人 |
VINSON, MARK A.;KUMAR, RAKESH;JONES, NORMAN W.;GULETT, MICHAEL R. |
分类号 |
H01L21/265;H01L21/322;H01L21/336;H01L21/768;H01L21/8234;H01L29/08;H01L29/10;H01L29/45;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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