发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY BONDING TOGETHER SILICON SUBSTRATES |
摘要 |
<p>: There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrates are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD.</p> |
申请公布号 |
CA1134058(A) |
申请公布日期 |
1982.10.19 |
申请号 |
CA19820396119 |
申请日期 |
1982.02.11 |
申请人 |
HITACHI, LTD. |
发明人 |
ONUKI, JIN;SUWA, MASATERU;SOENO, KO;ONODERA, HISAKICHI |
分类号 |
H01L21/22;(IPC1-7):01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|