Semiconductor device with improved breakdown voltage

摘要

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first region of semiconductor material having a first conductivity type and a first dopant concentration, a second region of semiconductor material having a second conductivity type overlying the first region, a drift region of semiconductor material having the first conductivity type overlying the second region, and a drain region of semiconductor material having the first conductivity type. The drift region and the drain region are electrically connected, with at least a portion of the drift region residing between the drain region and the second region, and at least a portion of the second region residing between that drift region and the first region. In one or more exemplary embodiments, the first region abuts an underlying insulating layer of dielectric material.

主权项

1. A semiconductor device structure comprising:
a layer of dielectric material; a first region of semiconductor material overlying the layer of dielectric material, the first region having a first conductivity type and a first dopant concentration; a second region of semiconductor material having a second conductivity type, the second region overlying the first region; a drift region of semiconductor material having the first conductivity type overlying the second region, at least a portion of the second region residing between the first region and the drift region, the drift region having a second dopant concentration; and a drain region of semiconductor material having the first conductivity type and a third dopant concentration, wherein:
at least a portion of the drift region resides between the second region and the drain region;the first dopant concentration is less than or equal to the second dopant concentration;the third dopant concentration is greater than the second dopant concentration; andthe first region is isolated from the drift region.