Semiconductor device and method of manufacturing the same

摘要

A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a catalyst film over an insulator; growing a graphene layer originating from the catalyst film; forming a conductive film in contact with the graphene layer, over the insulator; removing the catalyst film; forming a gate insulation film over the graphene layer; and forming a top gate electrode over the gate insulation film.