发明名称 |
SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To improve an ohmic contact property without changing moistening property and working property by using the solder material having a P type impurity. CONSTITUTION:A silicon substrate 1 and a stem 3 are fixed by the solder material 2 consisting of a gold silicon eutectic alloy into which aluminum is mixed. Accordingly, yield is improved, and cost is reduced. |
申请公布号 |
JPS57167641(A) |
申请公布日期 |
1982.10.15 |
申请号 |
JP19810052680 |
申请日期 |
1981.04.08 |
申请人 |
KIYUUSHIYUU NIPPON DENKI KK |
发明人 |
TOMINAGA YOSHIHIRO |
分类号 |
H01L21/52;H01L21/58;(IPC1-7):01L21/58 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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