| 摘要 |
PURPOSE:To prevent generation of a ghost by forming a photoconductive amorphous silicon carbide a-SiC layer contg. a specific ratio of helium and group Va element of periodic table on a substrate. CONSTITUTION:The photoconductive amorphous silicon carbide layer 5 contg. 1X10<-5>-5atom% helium and 0-10,000ppm group Va element of periodic table is formed on the substrate 1. This photosensitive body is characterized by incorporation of 1X10<-5>-5atom% He element into the photoconductive a-SiC layer 5. The deterioration in the electrophotographic characteristics within the range where there are no obstacles in practicability is obviated in said range and the generation of the ghost is prevented by the incorporation of He. The electric chargeability is enhanced advantageously in a negative polarity if the group Va element is doped into the a-SiC layer 5 in a 0-10,000ppm range, more preferably 0-1,000ppm range. |
