发明名称 PLASMA VAPOR-PHASE GROWING DEVICE
摘要 PURPOSE:To prevent powdery deposition onto the wall surface of a reaction chamber, and to obviate the generation of a pin hole by coating the surface of at least one electrode between parallel slat electrodes with an insulating material excepting a region opposed to the other electrode. CONSTITUTION:When the surfaces of the electrodes 2, 3 are coated with the insulating materials 9 excepting sections facing to space regions in which plasma must be originally generated and a high-frequency electric field is applied, plasma is generated only in a region 8' between the electrodes, and plasma is not generated in other space. Accordingly, when the plasma generating region is limited, powdery deposition onto the wall surface of the reaction chamber 1 is not generated because a reaction does not advance in the vicinity of the wall surface. The efficiency of utilization of raw materials is improved because the reaction advances only in space in the vicinity of a substrate.
申请公布号 JPS57167630(A) 申请公布日期 1982.10.15
申请号 JP19810036384 申请日期 1981.03.13
申请人 FUJITSU KK 发明人 TAKASAKI KANETAKE;KOYAMA KENJI
分类号 H01J37/32;C23C16/50;C23C16/509;C30B25/02;H01L21/205;H01L21/31 主分类号 H01J37/32
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