| 摘要 |
PURPOSE:To improve the accuracy of the measurement of the pattern width by previously forming a triangular pattern, the angle of intersection thereof is specified, while overlapping the pattern on the pattern, the pattern width thereof is measured. CONSTITUTION:An oxide film 1' is formed onto a semiconductor substrate, and patterned, and a window 1 is shaped. The window 1 is the pattern to be measured, and the triangular pattern 2 having the angle of intersection alpha previously specified is formed onto the window 1 through the thin oxide film. The length a, b of two sides of the triangular pattern 2 in a region in which the two patterns are overlapped is measured through a conventional pattern width measuring method. The pattern width d is obtained through the calculation of d=a.b. sinalpha/K (where K={(a.cosalpha-b)<2>+a<2>.sin<2>alpha}<1/2>). |
