| 摘要 |
PURPOSE:To treat the surface of the substrate without using a noxious gas by exposing the surface to the plasma of a compound containing Cl and thermally oxidizing the surface in a method making Cl<-> ions contaon into SiO2. CONSTITUTION:Parallel slat electrodes 1, 2 connected to a high-frequency power supply 3 and the Si substrate 4 arranged onto the electrode 1 are disposed into a reaction chamber. An indoor atmosphere is the mixed gas of a gas such as the O2 of 1 Torr and a gas such as the CCl2F2 of 0.01 Torr. When the high- frequency power of 13.56MHz and 500W is applied to the electrodes 1, 2 by the power supply 3, the mixed gas is changed into plasma, and Cl<-> ions are adsorbed onto the surface of the Si substrate. When the surface is exposed for approximately one min. under said condition and thermally oxidized through a normal method, SiO2 containing Cl<-> ions is formed onto the surface of the Si substrate. |
