| 摘要 |
PURPOSE:To prevent the extinguishment of a crystal defect by conducting a heat treating process at the temperature of 950 deg.C or higher in a heat treating process contaning a temperature rise to a high temperature from a low temperature and a temperature drop to the low temperature from the high temperature. CONSTITUTION:In the process such as the gate oxidizing process of a MOS type transistor, temperature treatment at 1,050 deg.C in a dried oxygen atmosphere is needed for approximately twenty min. in order to obtain the gate oxide film of approximately 350-400Angstrom . Low-temperature at 900 deg.C is conducted for seven min., temperature-rise treatment at the rate of 10 deg.C/min. for fifteen min., high- temperature treatment at 1,050 deg.C for ten min. and temperature-drop treatment at the rate of 5 deg.C/min. for thirty min. in the process, and a substrate is extracted from an oven at the point of time when the temperature reaches 900 deg.C. When the speed of the temperature rise or the temperature drop is the rate of 14 deg.C/min. or lower, heat treatment time at the high temperature can be shortened, and the extinguishment of the crystal defect in the substrate can be prevented. |
