摘要 |
PURPOSE:To increase the capacitance of a collector as well as to increase the marginality for the soft error of alpha-rays for the subject semiconductor device by a method wherein the uniconductive type base region of the transistor, which constitutes a memory cell, is contacted to the high density buried layer of reverse conductive type. CONSTITUTION:A collector contact region 3' is provided in the collector region 3 of the transistor which constitutes the memory cell, a base region 5 is provided in the region 3', and then emitters E1 and E2 are provided in the base region 5'. The high density N type impurity buried layer 1 is raised up into the layer 3 from the interface 4 of an N type epitaxial silicon layer 3 which is used as a substrate 2 and a collector, and this region comes in contact with a P type impurity layer 5 which was formed by diffusion on the base region 5'. Accordingly, the large electrostatic capacity, which will be formed by the region 5 and the buried layer 1, can be added to the base of the transistor. |