发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the capacitance of a collector as well as to increase the marginality for the soft error of alpha-rays for the subject semiconductor device by a method wherein the uniconductive type base region of the transistor, which constitutes a memory cell, is contacted to the high density buried layer of reverse conductive type. CONSTITUTION:A collector contact region 3' is provided in the collector region 3 of the transistor which constitutes the memory cell, a base region 5 is provided in the region 3', and then emitters E1 and E2 are provided in the base region 5'. The high density N type impurity buried layer 1 is raised up into the layer 3 from the interface 4 of an N type epitaxial silicon layer 3 which is used as a substrate 2 and a collector, and this region comes in contact with a P type impurity layer 5 which was formed by diffusion on the base region 5'. Accordingly, the large electrostatic capacity, which will be formed by the region 5 and the buried layer 1, can be added to the base of the transistor.
申请公布号 JPS57167675(A) 申请公布日期 1982.10.15
申请号 JP19810052663 申请日期 1981.04.08
申请人 NIPPON DENKI KK 发明人 AKASHI TSUTOMU
分类号 H01L29/73;G11C11/411;H01L21/331;H01L21/8229;H01L23/556;H01L27/07;H01L27/102;H01L29/10 主分类号 H01L29/73
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