MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent the disconnection of metallic wiring while enabling high integration by selectively forming an insulating film for isolating elements onto the surface of a substrate, thickly shaping a semiconductor layer for forming the elements and flattening the surface. CONSTITUTION:The silicon oxide films 22 are shaped selectively onto the surface of the silicon substrate 21, and the silicon single crystal layer 23 is formed onto the whole surface of the silicon substrate 21 in thickness thicker than the thickness of the silicon oxide films 22. The surface of the silicon substrate 21 is ground and flattened mechanically and chemically, and the thickness of silicon single crystal layers 24 grown onto sections 22' where the oxide films 22 of the silicon substrate 21 are not formed is made equal to the thickness of the selective silicon oxide films 22.