| 摘要 |
PURPOSE:To omit a polishing process by thermally treating a silicon substrate, forming an epitaxial layer onto the surface of the substrate and diffusing an impurity to the epitaxial layer. CONSTITUTION:Heat treatment containing a temperature raising process at the rate of 5 deg.C/min or lower is executed to the semiconductor substrate 11 consisting of silicon, the silicon epitxial layer 12 with not less than 2mum thickness is formed onto the surface of the substrate and the impurity is diffused to the layer 12. Heat treatment through the temperature raising process is repeated at least once or more, and the speed of a temperature rise of the first process is made the same as or later than the speed of the temperature rise after the second time, thus shaping a crystal defect up to the surface of the substrate in excellent controllability. A protective film such as SiO2 is formed or an oxygen atomosphere is introduced during a heat treatment process in order to protect the surface of the substrate, and an oxide film is shaped onto the surface of the substrate. |
