| 摘要 |
PURPOSE:To maintain an almost constant contact resistance even when the temperature goes up for the subject semiconductor device by a method wherein, after a metal silicide electrode has been formed on a silicon substrate, the ion having the impurities of the same type as the substrate is implanted on the interface of the above electode. CONSTITUTION:For example, after a molybdenum silicide layer of 2,000A has been formed, phosphorus of 4X10<15>[cm<-2>] per dosage is ion-implanted at 150KeV from above a molybdenum silicide layer in the direction of interface A as shown by the arrows. When a contact section is formed as above, almost no fluctuations are made in the contact resistance in an annealing which will be performed subsequently. As a result, an excellent ohmic contact can be obtained between the molybdenum silicide and an N<+> silicon substrate 2. |
